source current at a specified gate-drain condition — с немецкого на русский
остаточный ток истока — Ток истока при заданных напряжениях затвор исток и сток исток. Обозначение IИост ISDX [ГОСТ 19095 73] Тематики полупроводниковые приборы EN source current at a specified gate drain condition DE Sourcereststrom FR courant de source dans des… … Справочник технического переводчика
India — /in dee euh/, n. 1. Hindi, Bharat. a republic in S Asia: a union comprising 25 states and 7 union territories; formerly a British colony; gained independence Aug. 15, 1947; became a republic within the Commonwealth of Nations Jan. 26, 1950.… … Universalium
Electronic amplifier — A practical amplifier circuit An electronic amplifier is a device for increasing the power of a signal. It does this by taking energy from a power supply and controlling the output to match the input signal shape but with a larger amplitude. In… … Wikipedia
Germany — /jerr meuh nee/, n. a republic in central Europe: after World War II divided into four zones, British, French, U.S., and Soviet, and in 1949 into East Germany and West Germany; East and West Germany were reunited in 1990. 84,068,216; 137,852 sq.… … Universalium
analysis — /euh nal euh sis/, n., pl. analyses / seez /. 1. the separating of any material or abstract entity into its constituent elements (opposed to synthesis). 2. this process as a method of studying the nature of something or of determining its… … Universalium
education — /ej oo kay sheuhn/, n. 1. the act or process of imparting or acquiring general knowledge, developing the powers of reasoning and judgment, and generally of preparing oneself or others intellectually for mature life. 2. the act or process of… … Universalium
environment — environmental, adj. environmentally, adv. /en vuy reuhn meuhnt, vuy euhrn /, n. 1. the aggregate of surrounding things, conditions, or influences; surroundings; milieu. 2. Ecol. the air, water, minerals, organisms, and all other external factors… … Universalium
Russia — /rush euh/, n. 1. Also called Russian Empire. Russian, Rossiya. a former empire in E Europe and N and W Asia: overthrown by the Russian Revolution 1917. Cap.: St. Petersburg (1703 1917). 2. See Union of Soviet Socialist Republics. 3. See Russian… … Universalium
France — /frans, frahns/; Fr. /frddahonns/, n. 1. Anatole /ann nann tawl /, (Jacques Anatole Thibault), 1844 1924, French novelist and essayist: Nobel prize 1921. 2. a republic in W Europe. 58,470,421; 212,736 sq. mi. (550,985 sq. km). Cap.: Paris. 3.… … Universalium
Iraq — /i rak , i rahk /, n. a republic in SW Asia, N of Saudi Arabia and W of Iran, centering in the Tigris Euphrates basin of Mesopotamia. 22,219,289; 172,000 sq. mi. (445,480 sq. km). Cap.: Baghdad. Also, Irak. * * * Iraq Introduction Iraq Background … Universalium
building construction — Techniques and industry involved in the assembly and erection of structures. Early humans built primarily for shelter, using simple methods. Building materials came from the land, and fabrication was dictated by the limits of the materials and… … Universalium
source current at a specified gate-drain condition — с французского на русский
остаточный ток истока — Ток истока при заданных напряжениях затвор исток и сток исток. Обозначение IИост ISDX [ГОСТ 19095 73] Тематики полупроводниковые приборы EN source current at a specified gate drain condition DE Sourcereststrom FR courant de source dans des… … Справочник технического переводчика
India — /in dee euh/, n. 1. Hindi, Bharat. a republic in S Asia: a union comprising 25 states and 7 union territories; formerly a British colony; gained independence Aug. 15, 1947; became a republic within the Commonwealth of Nations Jan. 26, 1950.… … Universalium
Electronic amplifier — A practical amplifier circuit An electronic amplifier is a device for increasing the power of a signal. It does this by taking energy from a power supply and controlling the output to match the input signal shape but with a larger amplitude. In… … Wikipedia
Germany — /jerr meuh nee/, n. a republic in central Europe: after World War II divided into four zones, British, French, U.S., and Soviet, and in 1949 into East Germany and West Germany; East and West Germany were reunited in 1990. 84,068,216; 137,852 sq.… … Universalium
analysis — /euh nal euh sis/, n., pl. analyses / seez /. 1. the separating of any material or abstract entity into its constituent elements (opposed to synthesis). 2. this process as a method of studying the nature of something or of determining its… … Universalium
education — /ej oo kay sheuhn/, n. 1. the act or process of imparting or acquiring general knowledge, developing the powers of reasoning and judgment, and generally of preparing oneself or others intellectually for mature life. 2. the act or process of… … Universalium
environment — environmental, adj. environmentally, adv. /en vuy reuhn meuhnt, vuy euhrn /, n. 1. the aggregate of surrounding things, conditions, or influences; surroundings; milieu. 2. Ecol. the air, water, minerals, organisms, and all other external factors… … Universalium
Russia — /rush euh/, n. 1. Also called Russian Empire. Russian, Rossiya. a former empire in E Europe and N and W Asia: overthrown by the Russian Revolution 1917. Cap.: St. Petersburg (1703 1917). 2. See Union of Soviet Socialist Republics. 3. See Russian… … Universalium
France — /frans, frahns/; Fr. /frddahonns/, n. 1. Anatole /ann nann tawl /, (Jacques Anatole Thibault), 1844 1924, French novelist and essayist: Nobel prize 1921. 2. a republic in W Europe. 58,470,421; 212,736 sq. mi. (550,985 sq. km). Cap.: Paris. 3.… … Universalium
Iraq — /i rak , i rahk /, n. a republic in SW Asia, N of Saudi Arabia and W of Iran, centering in the Tigris Euphrates basin of Mesopotamia. 22,219,289; 172,000 sq. mi. (445,480 sq. km). Cap.: Baghdad. Also, Irak. * * * Iraq Introduction Iraq Background … Universalium
building construction — Techniques and industry involved in the assembly and erection of structures. Early humans built primarily for shelter, using simple methods. Building materials came from the land, and fabrication was dictated by the limits of the materials and… … Universalium
source current with gate short-circuited to drain — с немецкого на русский
полное сопротивление короткого замыкания пары обмоток
Сопротивление, равное Z = R + jХ, Ом, определяемое при номинальной частоте и расчетной температуре между выводами одной из обмоток пары, при замкнутой накоротко другой обмотке этой пары и разомкнутых остальных обмотках при их наличии. Для трехфазного трансформатора полное сопротивление короткого замыкания пары обмоток является полным сопротивлением фазы (в эквивалентной схеме соединения «звезда»).
В трансформаторе, имеющем обмотку с ответвлениями, полное сопротивление короткого замыкания относят к конкретному ответвлению. Если в НД не оговорено иное, выбирают основное ответвление.
Z=100Z/Zбаз
Где Zбаз=U2/Sном
(для трехфазных и однофазных трансформаторов), Ом (U — напряжение (номинальное или напряжение ответвления) обмотки, к которой относятся Z и Zбаз, В; Sном — номинальная мощность основного ответвления трансформатора, В•А).
Относительное значение полного сопротивления короткого замыкания может быть также определено как отношение напряжения, приложенного к данной обмотке в опыте короткого замыкания, вызывающего протекание через эту обмотку номинального тока (либо тока ответвления), к номинальному напряжению этой обмотки (либо напряжению ответвления). Это приложенное напряжение определяют как напряжение короткого замыкания (МЭС 421-07-01) данной пары обмоток и, как правило, выражают в процентах
[ ГОСТ 30830-2002]
EN
short-circuit impedance of a pair of windings
the equivalent star connection impedance related to one of the windings, for a given tapping and expressed in ohms per phase, at rated frequency, measured between the terminals of a winding when the other winding is short-circuited
NOTE
[IEV number 421-07-02]
FR
impédance de court-circuit d’une paire d’enroulements
impédance équivalente en connexion étoile, rapportée à l’un des enroulements, pour une prise donnée et exprimée en ohms par phase, à la fréquence assignée, mesurée aux bornes d’un enroulement lorsque l’autre enroulement est en court-circuit
NOTE – Cette valeur est normalement rapportée à une température de référence appropriée.
[IEV number 421-07-02]
Тематики
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drain current at a specified gate source resistance — с французского на русский
ток стока при нагруженном затворе
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor…), its main advantages are high commutation speed … Wikipedia
Electronic amplifier — A practical amplifier circuit An electronic amplifier is a device for increasing the power of a signal. It does this by taking energy from a power supply and controlling the output to match the input signal shape but with a larger amplitude. In… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Flash memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile … Wikipedia
India — /in dee euh/, n. 1. Hindi, Bharat. a republic in S Asia: a union comprising 25 states and 7 union territories; formerly a British colony; gained independence Aug. 15, 1947; became a republic within the Commonwealth of Nations Jan. 26, 1950.… … Universalium
Germany — /jerr meuh nee/, n. a republic in central Europe: after World War II divided into four zones, British, French, U.S., and Soviet, and in 1949 into East Germany and West Germany; East and West Germany were reunited in 1990. 84,068,216; 137,852 sq.… … Universalium
analysis — /euh nal euh sis/, n., pl. analyses / seez /. 1. the separating of any material or abstract entity into its constituent elements (opposed to synthesis). 2. this process as a method of studying the nature of something or of determining its… … Universalium
education — /ej oo kay sheuhn/, n. 1. the act or process of imparting or acquiring general knowledge, developing the powers of reasoning and judgment, and generally of preparing oneself or others intellectually for mature life. 2. the act or process of… … Universalium
Russia — /rush euh/, n. 1. Also called Russian Empire. Russian, Rossiya. a former empire in E Europe and N and W Asia: overthrown by the Russian Revolution 1917. Cap.: St. Petersburg (1703 1917). 2. See Union of Soviet Socialist Republics. 3. See Russian… … Universalium
gate-drain capacitance — с немецкого на русский
Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… … Wikipedia
Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration … Wikipedia
емкость затвор-сток — Емкость между затвором и стоком при разомкнутых по переменному току остальных выводах. Обозначение Cзсо Cgdo [ГОСТ 19095 73] Тематики полупроводниковые приборы EN gate drain capacitance DE Gate Drain Kapazität FR capacité grille drain … Справочник технического переводчика
ёмкость затвор — сток (полевого транзистора) — — [Я.Н.Лугинский, М.С.Фези Жилинская, Ю.С.Кабиров. Англо русский словарь по электротехнике и электроэнергетике, Москва, 1999 г.] Тематики электротехника, основные понятия EN gate drain capacitance … Справочник технического переводчика
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor…), its main advantages are high commutation speed … Wikipedia
High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… … Wikipedia
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… … Wikipedia
Cascode — The cascode is a two stage amplifier composed of a transconductance amplifier followed by a current buffer. Compared to a single amplifier stage, this combination may have one or more of the following advantages: higher input output isolation,… … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
drain-source-kapazität — с английского на русский
емкость сток-исток — Емкость между стоком и истоком при разомкнутых по переменному току остальных выводах. Обозначение Cсио Cdso [ГОСТ 19095 73] Тематики полупроводниковые приборы EN drain source capacitance DE Drain Source Kapazität FR capacité drain source … Справочник технического переводчика
Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… … Deutsch Wikipedia
Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Dual-Gate-MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
FinFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-FET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-Fet — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal Oxide Semiconductor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metall-Isolator-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
drain+current+at+a+specified+gate+source+resistance — с русского на все языки
ток стока при нагруженном затворе — Ток стока при заданном напряжении сток исток и включенном между затвором и истоком резистором. Обозначение IСнагр IDSR [ГОСТ 19095 73] Тематики полупроводниковые приборы EN drain current at a specified gate source resistance DE Drainstrom bei… … Справочник технического переводчика
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor…), its main advantages are high commutation speed … Wikipedia
Electronic amplifier — A practical amplifier circuit An electronic amplifier is a device for increasing the power of a signal. It does this by taking energy from a power supply and controlling the output to match the input signal shape but with a larger amplitude. In… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Flash memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile … Wikipedia
India — /in dee euh/, n. 1. Hindi, Bharat. a republic in S Asia: a union comprising 25 states and 7 union territories; formerly a British colony; gained independence Aug. 15, 1947; became a republic within the Commonwealth of Nations Jan. 26, 1950.… … Universalium
Germany — /jerr meuh nee/, n. a republic in central Europe: after World War II divided into four zones, British, French, U.S., and Soviet, and in 1949 into East Germany and West Germany; East and West Germany were reunited in 1990. 84,068,216; 137,852 sq.… … Universalium
analysis — /euh nal euh sis/, n., pl. analyses / seez /. 1. the separating of any material or abstract entity into its constituent elements (opposed to synthesis). 2. this process as a method of studying the nature of something or of determining its… … Universalium
education — /ej oo kay sheuhn/, n. 1. the act or process of imparting or acquiring general knowledge, developing the powers of reasoning and judgment, and generally of preparing oneself or others intellectually for mature life. 2. the act or process of… … Universalium
Russia — /rush euh/, n. 1. Also called Russian Empire. Russian, Rossiya. a former empire in E Europe and N and W Asia: overthrown by the Russian Revolution 1917. Cap.: St. Petersburg (1703 1917). 2. See Union of Soviet Socialist Republics. 3. See Russian… … Universalium
